First results from the characterization of a three-dimensional deep N-well MAPS prototype for vertexing applications

The prototype of a three-dimensional (3D) monolithic active pixel sensor (MAPS) has been characterized. The device, featuring a 20 μ m pitch, was designed based on the same approach that was adopted in developing the so-called deep N-well (DNW) MAPS in planar CMOS process. The new 3D design relies upon stacking two homogeneous tiers fabricated in a 130 nm CMOS technology. Different kinds of test structures, including single pixels, 3×3 arrays and 8×8 and 16×16 matrices were tested. Functionality of the collecting deep N-well electrode, the analog front-end and the digital readout electronics has been demonstrated. Inter-tier communication was found to work properly in the case of redundant interconnection and could be exploited for the test of the analog pixel section. On the other hand, inter-tier interconnections based on individual bond pads were proven ineffective likely due to wafer misalignment.