Author/Authors :
Nouais، نويسنده , , D. and Boetti، نويسنده , , N. and Bonvicini، نويسنده , , V. and Cerello، نويسنده , , P. and Giubellino، نويسنده , , Marيa P. and Hernلndez-Montoya، نويسنده , , R. and Kolojvari، نويسنده , , A. and Mazza، نويسنده , , G. and Nissinen، نويسنده , , J. and Rashevsky، نويسنده , , A. and Rivetti، نويسنده , , A. and Tosello، نويسنده , , F. and Vacchi، نويسنده , , A.، نويسنده ,
Abstract :
We report results on drift velocity monitoring using MOS charge injectors in silicon drift detectors obtained in beam test conditions. The correction of velocity variations as small as 0.03% caused by temperature variations of the order of 0.04 K allowed to get an average space resolution along all the drift path of 28 μm. Preliminary result demonstrating the possibility to correct for temperature gradients along the anode axis are also presented.
Keywords :
Position sensitive detector , Silicon detector , Drift detector , Drift velocity calibration , MOS charge injector
