Title of article
Challenges for silicon pixel sensors at the European XFEL
Author/Authors
Klanner، نويسنده , , Robert A. Becker، نويسنده , , Julian and Fretwurst، نويسنده , , Eckhart and Pintilie، نويسنده , , Ioana and Pِhlsen، نويسنده , , Thomas A. Schwandt، نويسنده , , Joern and Zhang، نويسنده , , Jiaguo، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2013
Pages
6
From page
2
To page
7
Abstract
A systematic experimental study of the main challenges for silicon-pixel sensors at the European XFEL is presented. The high instantaneous density of X-rays and the high repetition rate of the XFEL pulses result in signal distortions due to the plasma effect and in severe radiation damage. The main parameters of X-ray-radiation damage have been determined and their impact on p + n sensors is investigated. These studies form the basis of the optimized design of a pixel-sensor for experimentation at the European XFEL.
Keywords
Silicon-pixel sensor , sensor optimization , Plasma effect , X-ray-radiation damage , Charge losses , XFEL
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
2013
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2194865
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