Electrical properties of laser-bonded Silicon-On-Diamond samples

In this work we report preliminary tests aimed at the implementation of a Silicon-On-Diamond (SOD) radiation sensor. SOD materials have been prepared by continuously scanning a 20 ps pulsed 355 nm laser beam on the silicon–diamond interface. A pixel monolithic sensor has also been bonded to diamond with the same technique and tested to show that a complex electronic chip can undergo the process without any damage. Through silicon vias have been fabricated by laser drilling on the silicon side of the SOD samples and their insulation from the silicon bulk has been tested. The charge collection efficiency of a diamond sensor with laser-written graphitic contacts has been measured, to demonstrate a reliable and simple way to fabricate ohmic contacts on the diamond side of the SOD devices. Finally, a SOD material with electric contacts on the silicon and on the diamond sides has been tested as a particle sensor to demonstrate the electrical continuity of the silicon–diamond interface after the bonding.