Author/Authors :
Baudot، نويسنده , , Jérôme and Besson، نويسنده , , Auguste and Claus، نويسنده , , Gilles and Dulinski، نويسنده , , Wojciech and Dorokhov، نويسنده , , Andrei and Goffe، نويسنده , , Mathieu and Hu-Guo، نويسنده , , Christine and Molnar، نويسنده , , Levente and Sanchez-Castro، نويسنده , , Xitzel and Senyukov، نويسنده , , Serhiy and Winter، نويسنده , , Marc، نويسنده ,
Abstract :
CMOS Pixel Sensors tend to become relevant for a growing spectrum of charged particle detection instruments. This comes mainly from their high granularity and low material budget. However, several potential applications require a higher read-out speed and radiation tolerance than those achieved with the available devices based on a 0.35 μ m feature size technology. This paper shows preliminary test results of new prototype sensors manufactured in a 0.18 μ m process based on a high resistivity epitaxial layer of sizeable thickness. Grounded on these observed performances, we discuss a development strategy over the coming years to reach a full scale sensor matching the specifications of the upgraded version of the Inner Tracking System (ITS) of the ALICE experiment at CERN, for which a sensitive area of up to ∼ 10 m 2 may be equipped with pixel sensors.
