Title of article :
Low power analog front-end electronics in deep submicrometer CMOS technology based on gain enhancement techniques
Author/Authors :
Gَmez-Galلn، نويسنده , , J.A. and Sلnchez-Rodrيguez، نويسنده , , T. and Sلnchez-Raya، نويسنده , , M. and Martel، نويسنده , , I. and Lَpez-Martيn، نويسنده , , José A. and Carvajal، نويسنده , , R.G. and Ramيrez-Angulo، نويسنده , , J.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2014
Abstract :
This paper evaluates the design of front-end electronics in modern technologies to be used in a new generation of heavy ion detectors—HYDE (FAIR, Germany)—proposing novel architectures to achieve high gain in a low voltage environment. As conventional topologies of operational amplifiers in modern CMOS processes show limitations in terms of gain, novel approaches must be raised. The work addresses the design using transistors with channel length of no more than double the feature size and a supply voltage as low as 1.2 V. A front-end system has been fabricated in a 90 nm process including gain boosting techniques based on regulated cascode circuits. The analog channel has been optimized to match a detector capacitance of 5 pF and exhibits a good performance in terms of gain, speed, linearity and power consumption.
Keywords :
Gain boosting techniques , CMOS submicron technology , Analog readout front-end
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Journal title :
Nuclear Instruments and Methods in Physics Research Section A