Charge collection efficiency of standard and oxygenated silicon microstrip detectors

Two silicon microstrip detectors, one fabricated from a standard and the second from a highly oxygenated substrate, were non-uniformly irradiated by 24 GeV protons to fluences ranging between 2.3 and 6.3×1014 cm−2. Charge collection efficiency measurements, performed by pulsing the detectors with a 1060 μm wavelength laser, show that the beneficial effect of the oxygenation remains, although reduced with respect to that observed by C–V measurements on diodes fabricated with the detectors.