Macroscopic results for a novel oxygenated silicon material

High-resistivity FZ silicon diodes have been processed in order to increase their oxygen dimer (O2i) concentration. Deep level transient spectroscopy measurements have been performed after proton irradiation showing that the formation of the VO centre is suppressed. The substrates had a starting resistivity of 2–4 kΩ cm, with an oxygen concentration of 1015 and 1017 cm−3. Results for doping changes, leakage current and annealing behaviour after irradiation with 24 GeV/c protons are shown.