Title of article
Design and characterization of integrated front-end transistors in a micro-strip detector technology
Author/Authors
Simi، نويسنده , , G. D. Angelini ، نويسنده , , C. and Batignani، نويسنده , , G. and Bettarini، نويسنده , , S. and Bondioli، نويسنده , , M. and Boscardin، نويسنده , , M. and Bosisio، نويسنده , , L. and Dalla Betta، نويسنده , , G.-F. and Dittongo، نويسنده , , S. and Forti، نويسنده , , F. and Giorgi، نويسنده , , M. and Gregori، نويسنده , , P. and Manghisoni، نويسنده , , Boris M. and Morganti، نويسنده , , M. and U. Pignatel، نويسنده , , G. and Ratti، نويسنده , , L. and Re، نويسنده , , V. and Rizzo، نويسنده , , Jeferson G. and Speziali، نويسنده , , V. and Zorzi، نويسنده , , N.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
6
From page
193
To page
198
Abstract
We present the developments in a research program aimed at the realization of silicon micro-strip detectors with front-end electronics integrated in a high resistivity substrate to be used in high-energy physics, space and medical/industrial imaging applications. We report on the fabrication process developed at IRST (Trento, Italy), the characterization of the basic wafer parameters and measurements of the relevant working characteristics of the integrated transistors and related test structures.
Keywords
Bipolar transistors , Fabrication technology , Silicon micro-strip detectors , Field-effect devices , Electrical characterization
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
2002
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2196371
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