Title of article
A systematic study of BNL׳s 3D-Trench Electrode detectors
Author/Authors
Montalbano، نويسنده , , A. and Bassignana، نويسنده , , D. and Li، نويسنده , , Z. and Liu، نويسنده , , S. and Lynn، نويسنده , , D. and Pellegrini، نويسنده , , G. and Tsybychev، نويسنده , , D.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2014
Pages
6
From page
23
To page
28
Abstract
New types of silicon pixel detectors have been proposed because of the need for more radiation hard semiconductor devices for the high luminosity tracking detector upgrades at the Large Hadron Collider. A novel type of 3D Si pixel detectors is proposed, with each cell of the 3D-Trench Electrode pixel detector featuring a concentric trench electrode surrounding the central collecting column electrode. The pixel sensor is an array of those individual cells. Systematic 3D simulations using Silvacos TCAD programs have been carried out to study the characteristics of this novel 3D pixel design and to compare to the traditional 3D column electrode pixel design. The 3D simulations show a much lower depletion voltage and a more uniform electric field in the new 3D-Trench Electrode pixel detectors as compared to the traditional 3D column Electrode detectors. The first prototype 3D-Trench Electrode pixel detectors have been manufactured at the Centro Nacional De Microelectronica. Preliminary electrical measurements are discussed and charge collection efficiency measurements are presented.
Keywords
3D electrode Si detectors , Radiation hardness , 3D-Trench Electrode detectors , Radiation damage
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
2014
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2196501
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