Author/Authors :
G.C and Samic، نويسنده , , H and Sun، نويسنده , , G.C and Donchev، نويسنده , , V and Nghia، نويسنده , , N.X and Gandouzi، نويسنده , , M and Zazoui، نويسنده , , M and Bourgoin، نويسنده , , J.C and El-Abbassi، نويسنده , , H and Rath، نويسنده , , S and Sellin، نويسنده , , P.J، نويسنده ,
Abstract :
We have studied the current–voltage and capacitance–voltage characteristics of p/i/n structures made on non-intentionally doped epitaxial GaAs layers grown by the chemical reaction method. Deep level transient spectroscopy demonstrates that these layers contain a low defect concentration. X-ray photoconductivity shows that the diffusion length is large. The homogeneity of the properties of these layers, which has been evaluated over large area (cm2), is confirmed by photoluminescence mapping.
Keywords :
Epitxial layer , Pin structure , X-ray detector , GaAS
