Title of article
A very high charge, high polarization gradient-doped strained GaAs photocathode
Author/Authors
Maruyama، نويسنده , , T and Brachmann، نويسنده , , A and Clendenin، نويسنده , , J.E and Desikan، نويسنده , , T and Garwin، نويسنده , , E.L and Kirby، نويسنده , , R.E and Luh، نويسنده , , D.-A and Turner، نويسنده , , J and Prepost، نويسنده , , R، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
13
From page
199
To page
211
Abstract
A high-gradient-doping technique is applied to strained polarized photocathodes. A 5.0–7.5 nm p-type surface layer doped to 5×1019 cm−3 is found sufficient to overcome the surface charge limit while maintaining high beam polarization. This technique can be employed to meet the charge requirements of the Next Linear Collider with a polarization approaching 80%.
Keywords
Polarized electron source , GaAs photocathode
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
2002
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2197360
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