Title of article
Frequency and temperature dependence of the depletion voltage from CV measurements for irradiated Si detectors
Author/Authors
Campbell، نويسنده , , D and Chilingarov، نويسنده , , A and Sloan، نويسنده , , T، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
9
From page
402
To page
410
Abstract
The dependence on measurement frequency and temperature of the depletion voltage extracted in the standard way from the CV characteristics of heavily irradiated silicon detectors is studied, parameterised and fitted. A similar pattern of behaviour is observed for a wide range of analysed detectors. A formula is derived which allows correction of the depletion voltage from one frequency–temperature point to another.
Keywords
Frequency dependence , Depletion voltage , temperature dependence , Irradiated silicon detectors
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
2002
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2197378
Link To Document