Title of article
Can silicon operate beyond 1015 neutrons cm−2?
Author/Authors
Da Via، نويسنده , , C and Watts، نويسنده , , S.J، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
8
From page
138
To page
145
Abstract
Factors that control the charge collection efficiency (CCE) in irradiated silicon detectors are discussed. The CCE and especially the related parameter, signal efficiency, are shown to be the limiting factors for operation after high levels of irradiation. Solutions to improving the radiation tolerance of silicon detectors are discussed, such as operational condition, defect engineering and device engineering. Conclusions are drawn as to future research directions.
Keywords
Oxygen dimer , Ramoיs theorem , Charge collection efficiency , Silicon detector
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
2003
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2197402
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