Author/Authors :
Miyoshi، نويسنده , , T and Lan، نويسنده , , K.A and Fujii، نويسنده , , Y and Hashimoto، نويسنده , , O and Hungerford، نويسنده , , E.V and Sato، نويسنده , , Y and Sarsour، نويسنده , , M and Takahashi، نويسنده , , T and Tang، نويسنده , , L and Ukai، نويسنده , , M and Yamaguchi، نويسنده , , H، نويسنده ,
Abstract :
A silicon strip detector was developed as a focal plane sensor for a 300 MeV electron spectrometer and operated in a high rate environment. The detector with 500 μm pitch provided good position resolution for electrons crossing the focal plane of the magnetic spectrometer system which was mounted in Hall C of the Thomas Jefferson National Accelerator Facility. The design of the silicon strip detector and the performance under high counting rate (⩽2.0×108 s−1 for ∼1000 SSD channels) and high dose are discussed.
Keywords :
Leakage Current , Noise level , Radiation damage , Silicon strip detectors
