Monolithic silicon E–ΔE telescope produced by the quasi-selective epitaxy

The monolithic, silicon, E–ΔE telescope with 20 μm thick ΔE detector followed by 70 μm thick E detector based on the n–p+–n structure was produced using a new developed process named quasi-selective epitaxy. The resistivity profile of the n–p+–n structure and E–ΔE two-dimensional scatter plots obtained after irradiation of the monolithic E–ΔE telescope by α-particles from the reaction 9Be(40Ar,α) and the calibration source are presented. Using the reaction 12C(14N,X) with energy E(14N)=82.6 MeV at the laboratory angle ϑ=20° performed at Warsaw Cyclotron the following products: He, Li, Be, B, C, N, O, F, Ne have been identified. An energy resolution of the monolithic E–ΔE telescope measured using α-particles was about 300 keV. The sheet resistance of the p+-layer separating both telescope detectors was estimated to about 4000 Ω using the numerical solution of the telegraphic equation describing of time-dependent evolution of the cross-talk potentials in the ΔE detector RC network.