A new Monte Carlo code for full simulation of silicon strip detectors

We have developed a full simulation code to evaluate the response of silicon strip detectors (SSDs) to ionizing particles. This simulation can be applied in the design stage of a SSD, when the detector parameters have to be chosen in order to optimize its performance. de allows to evaluate the electrical signals produced by ionizing particles crossing a SSD. All the physical processes leading to the generation of electron–hole pairs in silicon have been taken into account. Induced current signals on the readout strips are evaluated using the Shockley–Ramo theorem to the charge carriers propagating inside the detector volume. A simulation of the readout electronics has been implemented, to convert current signals into voltage signals. edictions of our Monte Carlo simulation have been compared with experimental data taken using a 400 μ m thick silicon strip detector with a 228 μ m strip pitch exposed to a pion beam.