Title of article
Parasitic resonance in a solid-state pulsed power modulator
Author/Authors
Koseki، نويسنده , , Kunio and Shimosaki، نويسنده , , Yoshito، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2006
Pages
7
From page
24
To page
30
Abstract
A resonant structure, induced by parasitic capacitance and inductance, was studied in a solid state pulsed power modulator for an induction synchrotron. Parasitic capacitors form a resonant structure in a switching arm with a self-inductance of the modulator circuit. The resonance induces a ringing in an acceleration voltage, causing an extra force to particles in the longitudinal direction. This effect is serious around the transition energy, because a mismatch exists between the particle distribution before the transition and a bucket shape after the transition. It was found that the most promising way to avoid this situation is to reduce the self-inductance of the modulator circuit. By sufficient reduction, an output waveform without any serious deterioration of flatness has been achieved by a newly developed power modulator.
Keywords
Pulse , MOSFET , Synchrotron oscillation , resonance , Induction acceleration
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
2006
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2199479
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