• Title of article

    Performances of epitaxial GaAs detectors

  • Author/Authors

    Bréelle، نويسنده , , G.C and Samic، نويسنده , , H and Sun، نويسنده , , G.C and Bourgoin، نويسنده , , J.C، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2003
  • Pages
    4
  • From page
    26
  • To page
    29
  • Abstract
    The aim of the study is to show that the thick epitaxial layers we grow using the Chemical Reaction method, a method which overcomes the difficulties in producing thick epitaxial layers, can provide detectors which have the same high performances, established since the 1970s and recently confirmed, as the ones made by conventional epitaxial methods. For this, we performed counting detection of high-energy protons, electrons, gamma and alpha particles with detectors made with such layers. The results obtained in each case are discussed in terms of energy resolution and charge collection efficiency.
  • Keywords
    GaAS , detector , p–i–n structure , epitaxy
  • Journal title
    Nuclear Instruments and Methods in Physics Research Section A
  • Serial Year
    2003
  • Journal title
    Nuclear Instruments and Methods in Physics Research Section A
  • Record number

    2200011