Author/Authors :
V. and Silenas، نويسنده , , A. and Pozela، نويسنده , , K. and Dapkus، نويسنده , , L. and Jasutis، نويسنده , , V. and Juciene، نويسنده , , V. and Pozela، نويسنده , , J. and Smith، نويسنده , , K.M.، نويسنده ,
Abstract :
An increase in sensitivity of the graded-gap AlxGa1−xAs/GaAs X-ray detectors is achieved using multiplication of charge generated in a detector body. A thin n-GaAs layer was grown on a narrow-gap side of the AlxGa1−xAs structure. This layer is used as a photoconductor. The multiplication of the charge injected from the graded-gap structure to the photoconductive n-GaAs layer exceeds a few hundred times. This sensitive structure was tested as a detector of single alpha particles (from an 241Am source) .
