Title of article
Annealing study of oxygenated and non-oxygenated float zone silicon irradiated with 15 MeV protons
Author/Authors
Hنrkِnen، نويسنده , , J and Tuominen، نويسنده , , E and Tuovinen، نويسنده , , E and Lassila-Perini، نويسنده , , K and Nummela، نويسنده , , S and Nysten، نويسنده , , J and Heikkilن، نويسنده , , P and Ovchinnikov، نويسنده , , V and Yli-Koski، نويسنده , , M and Palmu، نويسنده , , L. and Kallijنrvi، نويسنده , , S and Alanko، نويسنده , , T and Laitinen، نويسنده , , P and Pirojenko، نويسنده , , A and Riihimنki، نويسنده , , Sergey Tiourine، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
7
From page
85
To page
91
Abstract
Introducing oxygen into the silicon material is believed to improve the radiation hardness of silicon detectors. In this study, oxygenated and non-oxygenated silicon samples were processed and irradiated with 15 MeV protons. In order to speed up the defect reactions after the exposure to particle radiation, the samples were heat treated at elevated temperatures. In this way, the long-term stability of silicon detectors in hostile radiation environment could be estimated. Current–voltage measurements and Surface Photovoltage (SPV) method were used to characterize the samples.
Keywords
Surface photovoltage , detector , Radiation defect
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
2003
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2200305
Link To Document