Luminescence and photoelectric spectra of ZnSe/CdxZn1−xSe superlattices

The electroluminescence and photovoltage spectra of the ZnSe/CdxZn1−xSe superlattices with non-doping layers, grown by molecular beam epitaxy, have been measured. Narrow lines in the range 500–560 nm have been observed in electroluminescence measurements at 77 and 293 K. Well-resolved peaks attributed to carrier excitation, as well as photosensitivity bands corresponding to the CdxZn1−xSe/ZnSe superlattice region and the ZnSe buffer layer, have been observed in photovoltaic measurements.