Title of article :
Observation, modeling, and temperature dependence of doubly peaked electric fields in irradiated silicon pixel sensors
Author/Authors :
Swartz، نويسنده , , M. and Chiochia، نويسنده , , V. and Allkofer، نويسنده , , Y. and Bortoletto، نويسنده , , D. and Cremaldi، نويسنده , , L. and Cucciarelli، نويسنده , , S. and Dorokhov، نويسنده , , A. and Hِrmann، نويسنده , , C. and Kim، نويسنده , , D. and Konecki، نويسنده , , M. and Kotlinski، نويسنده , , D. and Prokofiev، نويسنده , , K. and Regenfus، نويسنده , , C. and Rohe، نويسنده , , T. and Sanders، نويسنده , , D.A. and Son، نويسنده , , S. and Speer، نويسنده , , T.، نويسنده ,
Abstract :
We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trapping of charge carriers can be tuned to produce a good description of the measured charge collection profiles in the fluence range from 0.5 × 10 14 to 5.9 × 10 14 n eq / cm 2 . The model correctly predicts the variation in the profiles as the temperature is changed from - 10 to - 25 ∘ C . The measured charge collection profiles are inconsistent with the linearly varying electric fields predicted by the usual description based upon a uniform effective doping density. This observation calls into question the practice of using effective doping densities to characterize irradiated silicon.
Keywords :
Simulation , Space charge , Electric fields , Radiation effects , Pixels
