• Title of article

    Measurement of the single event upset cross-section in the SVX IIe chip

  • Author/Authors

    Juste، نويسنده , , A. and Tripathi، نويسنده , , S.M. and Wijngaarden، نويسنده , , D.A.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2003
  • Pages
    8
  • From page
    371
  • To page
    378
  • Abstract
    The Single Event Effect cross-section for the SVX IIe readout chip has been measured using 63.3 MeV protons from the UC Davis cyclotron. The expected rate of Single Event Upsets in the Dط Silicon Microstrip Tracker, which uses the SVX IIe chip, is low enough for stable running. No Single Event Latchups were recorded. The chips withstood radiation doses of over 3 Mrad (3×104 Gy), well over the dose expected for the anticipated exposure of the detector.
  • Keywords
    Single event upset , Radiation tolerance , Silicon detector
  • Journal title
    Nuclear Instruments and Methods in Physics Research Section A
  • Serial Year
    2003
  • Journal title
    Nuclear Instruments and Methods in Physics Research Section A
  • Record number

    2201306