Title of article
Measurement of the single event upset cross-section in the SVX IIe chip
Author/Authors
Juste، نويسنده , , A. and Tripathi، نويسنده , , S.M. and Wijngaarden، نويسنده , , D.A.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
8
From page
371
To page
378
Abstract
The Single Event Effect cross-section for the SVX IIe readout chip has been measured using 63.3 MeV protons from the UC Davis cyclotron. The expected rate of Single Event Upsets in the Dط Silicon Microstrip Tracker, which uses the SVX IIe chip, is low enough for stable running. No Single Event Latchups were recorded. The chips withstood radiation doses of over 3 Mrad (3×104 Gy), well over the dose expected for the anticipated exposure of the detector.
Keywords
Single event upset , Radiation tolerance , Silicon detector
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
2003
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2201306
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