Author/Authors :
Despeisse، نويسنده , , M. and Anelli، نويسنده , , G. and Commichau، نويسنده , , S. and Dissertori، نويسنده , , G. and Garrigos، نويسنده , , A. and Jarron، نويسنده , , P. and Miazza، نويسنده , , C. and Moraes، نويسنده , , D. and Shah، نويسنده , , A. and Wyrsch، نويسنده , , N. and Viertel، نويسنده , , G.، نويسنده ,
Abstract :
We present the experimental results obtained with a novel monolithic silicon pixel detector which consists in depositing a n–i–p hydrogenated amorphous silicon (a-Si:H) diode straight above the readout ASIC (this technology is called Thin Film on ASIC, TFA). The characterization has been performed on 13 and 30 μm thick a-Si:H films deposited on top of an ASIC containing a linear array of high-speed low-noise transimpedance amplifiers designed in a 0.25 μm CMOS technology. Experimental results presented have been obtained with a 600 nm pulsed laser. The results of charge collection efficiency and charge collection speed of these structures are discussed.
