Author/Authors :
-، - نويسنده Department of Physics, Sree Sastha Institute of Engineering and Technology, Chembarambakkam, Chennai 600123, India. Sagadevan, S. , -، - نويسنده Department of Physics, Madha Engineering College, Kundrathur, Chennai, India. Pandurangan, K.
Abstract :
Nowadays, II – IV group semiconductor thin films have attracted considerable attention from the research community because of their wide range of application in the fabrication of solar cells and other opto-electronic devices. Cadmium zinc sulfide (Zn-CdS) thin films were grown by chemical bath deposition (CBD) technique. X-ray diffraction (XRD) is used to analyze the structure and crystallite size and scanning electron microscopy is used to study the morphology of Zn-CdS thin film. Optical studies have been carried out using UV-Visible-NIR transmission spectrum. The dielectric properties of Zn-CdS thin films have been studied in the different frequency at different temperatures. The AC conductivity study shows a normal dielectric behavior with frequency which reveals that the dispersion is due to the interfacial polarization.
