Title of article
Schottky and pn junction cryogenic radiation detectors made of p-InSb compound semiconductor
Author/Authors
Kanno، نويسنده , , I. and Hishiki، نويسنده , , S. and Murakami، نويسنده , , H. and Sugiura، نويسنده , , O. and Murase، نويسنده , , Y. and Nakamura، نويسنده , , T. and Katagiri، نويسنده , , M.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
3
From page
93
To page
95
Abstract
Schottky and pn junction detectors were fabricated with p-InSb. Fabrication methods, energy spectra of 241Am alpha particles and rise times are shown. We could observe pulses at operating temperatures up to 77 and 115 K for the Schottky and the pn junction detectors, respectively.
Keywords
Semiconductor , radiation detector , InSb
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
2004
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2201612
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