Author/Authors :
Reznik، نويسنده , , A. and Lui، نويسنده , , B.J.M. and Ohkawa، نويسنده , , Y. and Matsubara، نويسنده , , T. and Miyakawa، نويسنده , , K. and Kubota، نويسنده , , M. and Tanioka، نويسنده , , K. and Kawai، نويسنده , , T. and Zhao، نويسنده , , W. and Rowlands، نويسنده , , J.A.، نويسنده ,
Abstract :
The quantum efficiency of photo-charge generation and avalanche multiplication in amorphous selenium (a-Se) photodetectors were measured over considerable ranges of photoexcitation wavelengths (420–600 nm) and electric fields (10–112.5 V/μm) for several different a-Se target thicknesses (8–35 μm). An avalanche multiplication factor of 1000 is shown for a 35 μm thick a-Se layer at an electric field of 98 V/μm. The experimental results on quantum efficiency can be explained by the Onsager theory of electron–hole pair dissociation in conjunction with an electric field-induced delocalization of states.
