A ZnS–Si isotype heterojunction avalanche photodiode structure for scintillation light detection

We have developed a zinc sulfide–silicon (ZnS–Si) isotype heterojunction avalanche photodiode (APD) structure that has high quantum efficiency and low excess noise factor for photons of wavelength in the region from 340 to 800 nm. The dependence of quantum efficiency, mean signal and its fluctuation on incident photons wavelength are calculated in a well-defined device geometry by a Single Particle Monte Carlo simulation technique. Based on this work, we offer a new APD structure for scintillation light detection.