Title of article :
An improved PIN photodetector with integrated JFET on high-resistivity silicon
Author/Authors :
Dalla Betta، نويسنده , , Gianfranco and Piemonte، نويسنده , , Claudio and Boscardin، نويسنده , , Maurizio and Gregori، نويسنده , , Paolo de Zorzi، نويسنده , , Nicola and Fazzi، نويسنده , , Alberto and Pignatel، نويسنده , , Giorgio U.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2006
Abstract :
We report on a PIN photodetector integrated with a Junction Field Effect Transistor (JFET) on a high-resistivity silicon substrate. Owing to a modified fabrication technology, the electrical and noise characteristics of the JFET transistor have been enhanced with respect to the previous versions of the device, allowing the performance to be significantly improved. In this paper, the main design and technological aspects relevant to the proposed structure are addressed and experimental results from the electrical characterization are discussed.
Keywords :
Silicon radiation detectors , PIN photodetectors , Electrical characterization , Junction field effect transistors , Fabrication technology
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
