Title of article
Irradiation effects on thin epitaxial silicon detectors
Author/Authors
Khomenkov، نويسنده , , V. and Bisello، نويسنده , , D. and Bruzzi، نويسنده , , M. and Candelori، نويسنده , , A. S. Litovchenko، نويسنده , , A. and Piemonte، نويسنده , , C. and Rando، نويسنده , , R. and Ravotti، نويسنده , , F. and Zorzi، نويسنده , , N.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2006
Pages
5
From page
61
To page
65
Abstract
Radiation hardness of silicon detectors based on thin epitaxial layer on Czochralski (CZ) substrate for the LHC upgrade (Super-LHC) was studied. No type inversion was observed after irradiation by 24 GeV/c protons up to the fluence of 1016 p/cm2 due to overcompensating donor generation. After long-term annealing (corresponding to 500 days at room temperature) proton irradiated devices show a decrease of the effective doping concentration and then undergo type inversion. Measurements confirm that thin epitaxial devices on CZ substrate could be used for innermost layers of vertex detectors in future experiments at the Super-LHC.
Keywords
24 , Silicon detector , Epitaxial layer , Super-LHC , GeV/c protons , Radiation damage
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
2006
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2201959
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