Author/Authors :
Tuovinen، نويسنده , , E. and Hنrkِnen، نويسنده , , J. and Luukka، نويسنده , , P. and Tuominen، نويسنده , , E. and Verbitskaya، نويسنده , , E. V. Eremin، نويسنده , , Huy V. and Ilyashenko، نويسنده , , I. and Pirojenko، نويسنده , , A. and Riihimنki، نويسنده , , I. and Virtanen، نويسنده , , A. and Leinonen، نويسنده , , K.، نويسنده ,
Abstract :
We have irradiated Czochralski silicon (Cz-Si) and Float Zone silicon (Fz-Si) detectors with 24 GeV / c and 10 MeV protons. Samples were characterized with Capacitance-Voltage measurements (CV), Transient Current Technique (TCT) and secondary electron backscattering recorded by Scanning Electron Microscope (SEM). We present the evolution of the effective doping concentration as a function of irradiation fluence as well as the introduction rate of negative space charge, β -parameter. According to these measurements, we found that Cz-Si is more radiation hard than Fz-Si. Both TCT and SEM measurements indicated that Space Charge Sign Inversion (SCSI) occurred in the heavily irradiated Fz-Si and in the Cz-Si irradiated with 10 MeV protons. However, the SCSI did not take place in Cz-Si irradiated with 24 GeV / c protons even after high irradiation fluence.
Keywords :
Czochralski silicon , Transient current technique , Scanning electron microscope , Silicon detectors , Radiation hardness
