Multi-linear silicon drift detectors for X-ray and Compton imaging

Novel architectures of multi-anode silicon drift detectors with linear geometry (Multi-Linear Silicon Drift Detectors) have been developed to image X-rays and Compton electrons with excellent time resolution and achievable energy resolution better than 200 eV FWHM at 5.9 keV. In this paper we describe the novel features of Multi-Linear Silicon Drift Detectors and their possible operating modes highlighting the impact on the imaging and spectroscopic capabilities. An application example of Multi-Linear Silicon Drift Detectors for fast 2D elemental mapping by means of K-edge subtraction imaging is shown. The charge deposited by Compton electrons in a Multi-Linear Silicon Drift Detector prototype irradiated by a 22Na source has been measured showing the possibility to clearly resolve the 2D projection of the ionization track and to estimate the specific energy loss per pixel. The reconstruction of Compton electron tracks within a silicon detector layer can increase the sensitivity of Compton telescopes for nuclear medicine and γ-ray astronomy.