Author/Authors :
Stani?، نويسنده , , S. and Aihara، نويسنده , , H. and Barbero، نويسنده , , M. and Bozek، نويسنده , , A. and Browder، نويسنده , , T. and Hazumi، نويسنده , , M. and Kennedy، نويسنده , , J. and Kent، نويسنده , , N. and Olsen، نويسنده , , S. and Palka، نويسنده , , H. and Rosén، نويسنده , , M. and Ruckman، نويسنده , , L. and Trabelsi، نويسنده , , K. and Tsuboyama، نويسنده , , T. and Uchida، نويسنده , , K. and Varner، نويسنده , , G. and Yang، نويسنده , , Q.، نويسنده ,
Abstract :
Due to the need for precise vertexing at future higher luminosity B-factories with the expectedly increasing track densities and radiation exposures, upgrade of present silicon strip detectors with thin, radiation resistant pixel detectors is highly desired. Considerable progress in the technological development of thin CMOS based Monolithic Active Pixel Sensors (MAPS) in the last years makes them a realistic upgrade option and the feasibility studies of their application in Belle are actively pursued. The most serious concerns are their radiation hardness and their read-out speed. To address them, several prototypes denoted as Continuous Acquisition Pixel (CAP) sensors have been developed and tested. The latest of the CAP sensor prototypes is CAP3, designed in the TSMC 0.25 μ m process with a 5-deep sample pair pipeline in each pixel. A setup with several CAP3 sensors will be used to assess the performance of a full scale pixel read-out system running at realistic read-out speed. The results and plans for the next stages of R&D towards a full Pixel Vertex Detector (PVD) are presented.
Keywords :
Radiation hard , B-factory , Vertex detector , Monolithic active pixel sensor , CMOS
