Author/Authors :
Goltsman، نويسنده , , G and Korneev، نويسنده , , A and Izbenko، نويسنده , , V and Smirnov، نويسنده , , K and Kouminov، نويسنده , , P and Voronov، نويسنده , , B and Kaurova، نويسنده , , N and Verevkin، نويسنده , , A and Zhang، نويسنده , , J and Pearlman، نويسنده , , A and Slysz، نويسنده , , W and Sobolewski، نويسنده , , R، نويسنده ,
Abstract :
NbN detectors, formed into meander-type, 10×10-μm2 area structures, based on ultrathin (down to 3.5-nm thickness) and nanometer-width (down to below 100 nm) NbN films are capable of efficiently detecting and counting single photons from the ultraviolet to near-infrared optical wavelength range. Our best devices exhibit QE >15% in the visible range and ∼10% in the 1.3–1.5-μm infrared telecommunication window. The noise equivalent power (NEP) ranges from ∼10−17 W/Hz1/2 at 1.5 μm radiation to ∼10−19 W/Hz1/2 at 0.56 μm, and the dark counts are over two orders of magnitude lower than in any semiconducting competitors. The intrinsic response time is estimated to be <30 ps. Such ultrafast detector response enables a very high, GHz-rate real-time counting of single photons. Already established applications of NbN photon counters are non-invasive testing and debugging of VLSI Si CMOS circuits and quantum communications.
Keywords :
Single-photon detector , Superconducting NbN films , Noise equivalent power , Quantum efficiency , Quantum communications