Author/Authors :
H?rk?nen، نويسنده , , J. and Abreu، نويسنده , , M. and Anbinderis، نويسنده , , P. and Anbinderis، نويسنده , , T. and D’Ambrosio، نويسنده , , N. and de Boer، نويسنده , , W. and Borchi، نويسنده , , E. and Borer، نويسنده , , K. and Bruzzi، نويسنده , , M. and Buontempo، نويسنده , , S. and Chen، نويسنده , , W. and Cindro، نويسنده , , V. and Dezillie، نويسنده , , B. and Dierlamm، نويسنده , , A. V. Eremin and B. P. Mikhailov ، نويسنده , , V. and Gaubas، نويسنده , , E. a، نويسنده ,
Abstract :
The CERN RD39 Collaboration is developing super-radiation hard cryogenic Si detectors for applications in experiments of the LHC and the future LHC Upgrade. Radiation hardness up to the fluence of 1016 neq/cm2 is required in the future experiments. Significant improvement in the radiation hardness of silicon sensors has taken place during the past years. However, 1016 neq/cm2 is well beyond the radiation tolerance of even the most advanced semiconductor detectors made by commonly adopted technologies. Furthermore, at this radiation load the carrier trapping will limit the charge collection depth to the range of 20–30 μm regardless of the depletion depth. The key of our approach is freezing the trapping that affects Charge Collection Efficiency (CCE).
