Author/Authors :
Unno، نويسنده , , Y. and Kohriki، نويسنده , , T. and Kondo، نويسنده , , T. and Terada، نويسنده , , S. and Ohsugi، نويسنده , , T. and Iwata، نويسنده , , Y. and Takashima، نويسنده , , James R. and Nakano، نويسنده , , I. and Yamamura، نويسنده , , K. and Yamamoto، نويسنده , , K.، نويسنده ,
Abstract :
In order to suppress the high electric field at the edge of the p-stop structure, a novel p-stop structure with DC field-plate was proposed. An n-in-n detector with the novel p-stop structure showed no onset of microdischarge, before and after proton irradiation of fluences of 3×1013 and 3×1014 p/cm2.
Keywords :
P-Stop , n-Side , n-in-n , Silicon , microstrip , detector
