Title of article
Studies of bulk damage induced in different silicon materials by 900 Mev electron irradiation
Author/Authors
Dittongo، نويسنده , , S. and Bosisio، نويسنده , , L. and Contarato، نويسنده , , D. and D’Auria، نويسنده , , G. and Fretwurst، نويسنده , , E. and H?rk?nen، نويسنده , , J. and Lindstrom، نويسنده , , G. and Tuovinen، نويسنده , , E.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2005
Pages
6
From page
300
To page
305
Abstract
Silicon test structures manufactured on different substrate materials (standard and oxygenated float-zone, magnetic and non-magnetic Czochralski, epitaxial silicon) have been irradiated with 900 MeV electrons up to a fluence of 6.1 × 10 15 e / cm 2 . Results are reported on the variation of the effective dopant concentration and of the leakage current density as a function of the electron fluence. The time evolution of the effective dopant concentration is also reported after thermal annealing cycles at 80 ∘ C .
Keywords
Radiation hardness , High resistivity silicon devices , Electron radiation effects
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
2005
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2203742
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