Title of article :
Tests of silicon sensors for the CMS pixel detector
Author/Authors :
Dorokhov، نويسنده , , A. and Amsler، نويسنده , , C. and Bortoletto، نويسنده , , D. and Chiochia، نويسنده , , V. and Cremaldi، نويسنده , , L. and Cucciarelli، نويسنده , , S. and Konecki، نويسنده , , M. and Prokofiev، نويسنده , , K. and Regenfus، نويسنده , , C. and Rohe، نويسنده , , T. and Sanders، نويسنده , , D. and Son، نويسنده , , S. and Speer، نويسنده , , T. and Swartz، نويسنده , , M.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
6
From page :
71
To page :
76
Abstract :
The tracking system of the CMS experiment, currently under construction at the Large Hadron Collider (LHC) at CERN (Geneva, Switzerland), will include a silicon pixel detector providing three spacial measurements in its final configuration for tracks produced in high-energy pp collisions. In this paper, we present the results of test beam measurements performed at CERN on irradiated silicon pixel sensors. Lorentz angle and charge collection efficiency were measured for two sensor designs and at various bias voltages.
Keywords :
Radiation hardness , Charge collection , CMS , LHC , Lorentz angle , pixel
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Serial Year :
2004
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Record number :
2203803
Link To Document :
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