High-density hybrid interconnect methodologies

The ultra-high-density hybrid flip–chip integration of an array of detectors and its dedicated readout electronics can be achieved not only with a variety of solder bump techniques such as pure indium of indium alloys, Ph–In, Ni/PbSn, but also with conducting polymers, etc. Particularly for cooled applications or ultra-high-density applications, indium solder bump technology (electroplated or evaporated) is the method of choice. The state-of-the-art of solder bump technologies that are to a high degree independent of the underlying detector material will be presented and examples of interconnect densities between 5×104 and 1×106/cm2 will be demonstrated. veral classes of detectors, flip–chip integration is not allowed since the detectors have to be illuminated from the top. This applies to image sensors for EUV applications such as GaN/AlGaN-based detectors and MEMS-based detectors. In such cases, the only viable interconnection method has to be through the (thinned) detector wafer followed by a based–based integration. The approaches for dense and ultra-dense through-the-wafer interconnect “vias” will be presented. rview, of state-of-the-art hybrid integration and, in particular, the technology approaches in IMEC that will be able to address future hybrid detector needs, is given.