Title of article :
Charge collection properties of heavily irradiated epitaxial silicon detectors
Author/Authors :
Kramberger، نويسنده , , G. and Cindro، نويسنده , , Jurij V. and Dolenc، نويسنده , , I. and Fretwurst، نويسنده , , E. and Lindstr?m، نويسنده , , G. and Mandic، نويسنده , , I. and Mikuz، نويسنده , , M. and Zavrtanik، نويسنده , , M.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
8
From page :
212
To page :
219
Abstract :
Detectors processed on epitaxial silicon seem to be a viable solution for the extreme radiation levels in the innermost layers of tracking detectors at upgraded LHC (SLHC). A set of epitaxial pad detectors of 50 and 75 μ m thicknesses ( ρ = 50 Ω cm ) was irradiated with 24 GeV / c protons and reactor neutrons up to equivalent fluences of 10 16 cm - 2 . Charge collection for minimum ionizing electrons from a 90Sr source was measured using a charge sensitive preamplifier and a 25 ns shaping circuit. The dependence of collected charge on annealing time and operation temperature was studied. Results were used to predict the performance of fine pitch pixel detectors proposed for SLHC.
Keywords :
Charge collection efficiency , LHC upgrade , Silicon detectors
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Serial Year :
2005
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Record number :
2204341
Link To Document :
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