Silicon detectors: Damage, modelling and expected long-time behaviour in physics experiments at ultra high energy

In this contribution, the structural modifications of the material and the degradation of devices is modelled and compared with the experimental data for more resistivities, temperatures, crystal orientations and oxygen concentrations, considering the existence of the new primary fourfold coordinated defect, besides the vacancy and the interstitial. Some estimations of the behaviour of detectors in specific environments at the next generations of high-energy physics experiments as LHC, SLHC, VLHC, or ULHC are done.