Title of article
DEPFET—detectors: New developments
Author/Authors
Lutz، نويسنده , , G. and Andricek، نويسنده , , L. and Eckardt، نويسنده , , R. and Hنlker، نويسنده , , O. and Hermann، نويسنده , , S. and Lechner، نويسنده , , Marc P. and Richter، نويسنده , , R. and Schaller، نويسنده , , G. and Schopper، نويسنده , , F. and Soltau، نويسنده , , H. and Strüder، نويسنده , , L. and Treis، نويسنده , , J. and Wِlfl، نويسنده , , S. and Zhang، نويسنده , , C.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2007
Pages
5
From page
311
To page
315
Abstract
The Depleted Field Effect Transistor (DEPFET) detector–amplifier structure forms the basis of a variety of detectors being developed at the MPI semiconductor laboratory. These detectors are foreseen to be used in astronomy and particle physics as well as other fields of science. The detector developments are described together with some intended applications. They comprise the X-ray astronomy missions XEUS and SIMBOL-X as well as the vertex detector of the planned International Linear Collider (ILC). All detectors are produced in the MPI semiconductor laboratory that has a complete silicon technology available.
Keywords
Simbol-X , XEUS , Silicon detector , Pixel detector , DEPFET
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
2007
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2205093
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