Title of article :
Test of micropixel avalanche photodiodes
Author/Authors :
Anfimov، نويسنده , , N. and Chirikov-Zorin، نويسنده , , I. and Krumshteyn، نويسنده , , Z. and Leitner، نويسنده , , R. and Olchevski، نويسنده , , A.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2007
Pages :
3
From page :
413
To page :
415
Abstract :
The micropixel avalanche photodiode (MAPD) is a novel photodetector with a multipixel intrinsic structure on the common silicon substrate. The typical size of each pixel is 20–30 μm and the density is about 103 mm−2. Each pixel works on the common load in the Geiger mode, where the discharge is limited by an individual quenching resistor (negative feedback like in gas Geiger counter) included in each pixel feeding chain located on the common substrate. In the Geiger mode one may get an amplification factor for a single photoelectron at the level of 106 at room temperature. Measurements of gain, photon detection efficiency, one photoelectron resolution, noise and dark current for different types of MAPD were performed and compared.
Keywords :
Spectrum , gain , capacitance , MAPD , photodiode , Photon detection efficiency , Micropixel , avalanche , Silicon
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Serial Year :
2007
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Record number :
2205178
Link To Document :
بازگشت