Author/Authors :
Corsi، نويسنده , , F. and Dragone، نويسنده , , A. and Marzocca، نويسنده , , C. and Del Guerra، نويسنده , , A. and Delizia، نويسنده , , P. and Dinu، نويسنده , , N. and Piemonte، نويسنده , , C. and Boscardin، نويسنده , , M. and Dalla Betta، نويسنده , , G.F.، نويسنده ,
Abstract :
Silicon photomultipliers (SiPM) have proven to be very attractive devices for low-energy photon detection. Thanks to their high gain and excellent timing resolution, they compare favourably to photomultiplier tubes (PMT) in many applications. Their electrical characteristics have to be taken into account to properly design the front-end electronics. Here, an electrical model of the SiPM is defined and an extraction procedure for the parameters involved in this model is proposed, based on suitable measurements performed on the real detector.
