Title of article
First results in micromapping the sensitivity to SEE of an electronic device in a SOI technology at the LNL IEEM
Author/Authors
Mattiazzo، نويسنده , , S. and Bisello، نويسنده , , D. and Giubilato، نويسنده , , P. and Kaminsky، نويسنده , , A. and Pantano، نويسنده , , D. and Silvestrin، نويسنده , , L. and Tessaro، نويسنده , , M. and Wyss، نويسنده , , J.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2011
Pages
4
From page
125
To page
128
Abstract
In this paper we review on radiation tolerance studies on a Monolithic Pixels Detector fabricated in a commercial Silicon On Insulator (SOI) technology and we report on the first application of Ion Electron Emission Microscopy to obtain a micrometric map of its sensitivity to Single Event Upset.
Keywords
Monolithic Pixel Sensors , Ion electron emission microscopy , Single event upset
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
2011
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2205196
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