Author/Authors :
Blanco Carballo، نويسنده , , V.M. and Salm، نويسنده , , C. and Smits، نويسنده , , S.M. and Schmitz، نويسنده , , J. and Chefdeville، نويسنده , , Alexander M. and van der Graaf، نويسنده , , J. Andersons · P. H. M. Timmermans ·
J. Modniks، نويسنده , , J. and Visschers، نويسنده , , J.L.، نويسنده ,
Abstract :
This paper presents the operational characteristics of several integrated Micromegas detectors. These detectors called InGrids are made by means of micro-electronic fabrication techniques. These techniques allow a large variety of detector geometry to be made and studied. Gain, gain homogeneity and energy resolution were measured for various amplification gap sizes, hole pitches and hole diameters in Argon/Isobutane. Gain measurements as a function of gap thickness are compared to the Rose and Korff formula and a model of the detector gain. Our model uses electric field maps and MAGBOLTZ calculated amplification coefficients.
Keywords :
Wafer post-procesing , Energy resolution , GAIN , Integrated Micromegas
