Title of article :
Degradation effects in TlBr single crystals under prolonged bias voltage
Author/Authors :
Kozlov، نويسنده , , V. and Kemell، نويسنده , , M. and Vehkamنki، نويسنده , , M. and Leskelن، نويسنده , , M.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2007
Pages :
5
From page :
10
To page :
14
Abstract :
Electrical properties of TlBr purified by hydrothermal annealing in pure water were studied by I–V, capacitance and photocurrent measurements using Ti-electrodes which were deposited by electron-beam evaporation. Time characteristics of the current during the aging were recorded under fixed voltage (0–200 V) at different temperatures 277–353 K. The samples were additionally characterised by the X-ray powder diffraction and rocking curve methods. The degradation of TlBr was studied by scanning electron microscopy (SEM) and energy dispersive X-ray spectrometry (EDS). The composition at the electrode area was observed to be different for the negative and positive sides.
Keywords :
Compound semiconductors , TlBr , Ionic current , Electrode degradation
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Serial Year :
2007
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Record number :
2206027
Link To Document :
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