Author/Authors :
Arai، نويسنده , , Y. and Miyoshi، نويسنده , , T. and Unno، نويسنده , , Y. and Tsuboyama، نويسنده , , T. and Terada، نويسنده , , S. and Ikegami، نويسنده , , Y. and Kohriki، نويسنده , , T. and Tauchi، نويسنده , , K. and Ikemoto، نويسنده , , Y. and Ichimiya، نويسنده , , R. and Ikeda، نويسنده , , H. and Hara، نويسنده , , K. and Miyake، نويسنده , , H. and Kochiyama، نويسنده , , M. and Sega، نويسنده , , T. and Hanagaki، نويسنده , , K. and Hirose، نويسنده , , M.، نويسنده ,
Abstract :
A monolithic pixel detector with 0.2 μ m silicon-on-insulator (SOI) CMOS technology has been developed. It has both a thick high-resistivity sensor layer and thin LSI circuit layer on a single chip. Integration-type and counting-type pixel detectors are fabricated and tested with light and X-rays. The process is open to many researchers through Multi Project Wafer (MPW) runs operated by KEK. Further improvements of the fabrication technologies are also under investigation by using a buried p-well and 3D integration technologies.
Keywords :
SOI , x-ray imaging , Particle tracking , pixel
