Author/Authors :
Fleta، نويسنده , , C. and Pennicard، نويسنده , , D. and Bates، نويسنده , , R. and Parkes، نويسنده , , C. and Pellegrini، نويسنده , , G. and Lozano، نويسنده , , M. and Wright، نويسنده , , V. and Boscardin، نويسنده , , M. and Dalla Betta، نويسنده , , G.-F. and Piemonte، نويسنده , , C. and Pozza، نويسنده , , A. and Ronchin، نويسنده , , S. and Zorzi، نويسنده , , N.، نويسنده ,
Abstract :
The work presented here is the result of the collaborative effort between the University of Glasgow, ITC-IRST (Trento) and IMB-CNM (Barcelona) in the framework of the CERN-RD50 Collaboration to produce 3D silicon radiation detectors and study their performance.
aper reports on two sets of 3D devices. IRST and CNM have fabricated a set of single-type column 3D detectors, which have columnar electrodes of the same doping type and an ohmic contact located at the backplane. Simulations of the device behaviour and electrical test results are presented. In particular, current–voltage, capacitance–voltage and charge collection efficiency measurements are reported. Other types of structures called double-sided 3D detectors are currently being fabricated at CNM. In these detectors the sets of n and p columns are made on opposite sides of the device. Electrical and technological simulations and first processing results are presented.
